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INTEGRATED CIRCUITS
DATA SHEET
UMA1022M Low cost dual frequency synthesizer for radio telephones
Product specification Supersedes data of 1998 May 15 File under Integrated Circuits, IC17 1998 Dec 09
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
FEATURES * Low phase noise * Low current from 3 V supply * Fully programmable dividers * 3-line serial interface bus * Input reference buffer configurable as an oscillator with external crystal resonator * Wide compliance voltage charge pump outputs * Two power-down input control pins. APPLICATIONS * 900 MHz and 2 GHz digital radio telephones * Portable battery-powered radio equipment. GENERAL DESCRIPTION The UMA1022M BICMOS device integrates prescalers, programmable dividers, a crystal oscillator/buffer and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd or a single LiIon cell in pocket phones, or from an external 3 V supply.
UMA1022M
The synthesizers operate at RF input frequencies up to 2.1 GHz and 550 MHz. All divider ratios are supplied via a 3-wire serial programming bus. The reference divider uses a common, fully programmable part and a separate subdivider section. In this way the comparison frequencies are related to each other allowing optimum isolation between charge pump pulses. Separate power and ground pins are provided to the analog (charge pump, prescaler) and digital (CMOS) circuits. An independent supply for the crystal oscillator section allows maximum frequency stability. The ground leads should be externally short-circuited to prevent large currents flowing across the die and thus causing damage. VDD and VDDX must be at the same potential. VCCA and VCCB must be equal to each other and equal to or greater than VDD (e.g. VDD = 3 V and VCCA = 5.5 V for wider VCO control voltage range). The charge pump currents (phase detector gain) are fixed by internal resistances and controlled by the serial interface. Only passive loop filters are necessary; the charge pumps function within a wide voltage compliance range to improve the overall system performance. Suitable pin layout is chosen to minimize coupling and interference between signals entering or leaving the chip.
QUICK REFERENCE DATA SYMBOL VDD VDDX Itot PARAMETER digital supply voltage crystal reference supply voltage all supply currents (IDD + ICCA + ICCB + IDDX) in active mode CONDITIONS VCCA = VCCB VDD VCCA = VCCB VDD VDDX = VDD E = 1; VCCA = VCCB = 3.0 V; VDDX = VDD = 3.0 V XON = 0 XON = 1 Itot(pd) fRF fIF fxtal fPCmax Tamb total supply currents in power-down mode RF input frequency IF input frequency crystal reference oscillator frequency maximum loop comparison frequency operating ambient temperature VCCA = VCCB 4.0 V - - - 300 50 50 3 - -30 14.65 15.9 40 - - - - 2000 - - - - 2100 550 400 20 - +85 mA mA A MHz MHz MHz MHz kHz C MIN. 2.7 2.7 2.7 TYP. 3.0 3.0 3.0 MAX. 5.5 5.5 5.5 UNIT V V V
VCCA, VCCB analog supply voltages
1998 Dec 09
2
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME UMA1022M BLOCK DIAGRAM SSOP20 DESCRIPTION plastic shrink small outline package; 20 leads; body width 4.4 mm
UMA1022M
VERSION SOT266-1
CPA
handbook, full pagewidth
VCCA 16
RFA 15
AGND 14
ONA 13
VDD 12
17
RF CHARGE PUMP
RF PRESCALER AND DIVIDER
UMA1022M
18 19 20 1 2 3
RF PHASE DETECTOR
RF DIVIDER LATCH
XOUT VDDX XIN XIN XGND XOUT
11 COMMON REFERENCE DIVIDER REFERENCE SUBDIVIDER REFERENCE DIVIDER LATCH SERIAL BUS 10 9
CLK DATA E
MUX
MUX
IF PHASE DETECTOR
IF DIVIDER LATCH
IF CHARGE PUMP 4 CPB 5 VCCB 6 IFB
IF PRESCALER AND DIVIDER 7 ONB 8
MGE627
DGND
Fig.1 Block diagram.
1998 Dec 09
3
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
PINNING SYMBOL XIN XGND XOUT CPB VCCB IFB ONB DGND E DATA CLK VDD ONA AGND RFA VCCA CPA XOUT VDDX XIN PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 DESCRIPTION inverting crystal reference input ground for crystal oscillator circuits crystal oscillator buffer output IF synthesizer charge pump output analog supply to IF synthesizer IF VCO main divider input IF power-on input; ONB = HIGH means IF synthesizer is active digital circuits ground programming bus enable input programming bus data input programming bus clock input digital circuits supply voltage RF power-on input; ONA = HIGH means RF synthesizer is active analog circuits ground RF VCO main divider input analog supply to RF synthesizer RF synthesizer charge pump output inverting oscillator buffer output supply voltage to crystal oscillator circuits non-inverting crystal reference input
handbook, halfpage
UMA1022M
XIN XGND XOUT CPB VCCB IFB ONB DGND E
1 2 3 4 5
20 XIN 19 VDDX 18 XOUT 17 CPA
UMA1022M
6 7 8 9
16 VCCA 15 14 13 12 RFA AGND ONA VDD
DATA 10
MGE626
11 CLK
Fig.2 Pin configuration.
1998 Dec 09
4
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
FUNCTIONAL DESCRIPTION Main dividers The main dividers are clocked at pin RFA by the RF oscillator signal and at pin IFB by the IF oscillator signal. The inputs are AC coupled through external capacitors. Input impedances are high, dominated by parasitic package capacitances, so matching is off-chip. The sensitive dividers operate with signal levels from 35 to 225 mV (RMS), at frequencies up to 2.1 GHz (RF part) and up to 550 MHz (IF part). Both include programmable bipolar prescalers followed by CMOS counters. The RF main divider allows programmable ratios from 512 to 65535; the IF blocks accept values between 128 and 16383. Crystal oscillator A fully differential low-noise amplifier/buffer is integrated providing outputs to drive other circuits, and to build a crystal oscillator; only needed are an external resonance circuit and tuning elements (temperature compensation). A bus controlled power-down mode disables the low-noise amplifier to reduce current if not needed. The normal differential input pins drive a clock buffer to provide edges to the programmable reference divider at frequencies up to 20 MHz. The inputs are AC coupled through external capacitors, and operate with signals down to 35 mV (RMS) and up to 0.5 V (RMS). Various crystal oscillator structures can be built using the amplifier. By coupling one output back to the appropriate input through the resonator, and decoupling the other input to ground, the second output becomes available to deliver the reference frequency to other circuits. Reference dividers A first common divider circuit produces an output frequency for RF or IF synthesizer phase comparison, depending on the P/A bit. It drives a second independent divider, which delivers the reference edge to the IF or RF synthesizer phase comparator. When P/A is logic 1, the output of the subdivider is connected to the RF phase comparator, whereas the output of the common divider is connected to the IF phase detector. The phase comparators run at related frequencies with a controlled phase difference to avoid interference when in-lock. The common 10-bit section permits divide ratios from 8 to 1023; the second subdivider allows phase comparison frequency ratios between 1 and 16. Table 2 indicates how to program the corresponding bits to get the wanted ratio. 1998 Dec 09 5 Phase comparators
UMA1022M
The phase detectors are driven by the output edges selected by the main and reference dividers. Each generates lead and lag signals to control the appropriate charge pump. The pumps output current pulses appear at pins CPA (RF synthesizer) and CPB (IF synthesizer). The current pulse duration is at least equal to the difference in time of arrival of the edges from the two dividers. If the main divider edge arrives first, CPA or CPB sink current. If the reference divider edge arrives first, CPA or CPB source current. For correct PLL operation the VCOs need to have a positive frequency/voltage control slope. The currents at CPA and CPB are programmed via the serial bus as multiples of an internally-set reference current. The passage into power-down mode is synchronized with respect to the phase detector to prevent output current pulses being interrupted. Additional circuitry is included to ensure that the gain of the phase comparators remains linear even for small phase errors. Serial programming bus A simple 3-line unidirectional serial bus is used to program the circuit. The 3 lines are DATA, clock (CLK) and enable (E). The data sent to the device is loaded in bursts framed by E. Programming clock edges and their appropriate data bits are ignored until E goes active LOW. The programmed information is loaded into the addressed latch when E returns HIGH. During normal operation, E should be kept HIGH. Only the last 19 bits serially clocked into the device are retained within the programming register. Additional leading bits are ignored, and no check is made on the number of clock pulses. The NMOS-rich design uses virtually no current when the bus is inactive; power-up is initiated when enable is taken LOW, and power-down occurs a short time after enable returns HIGH. Bus activity is allowed when either synthesizer is active or in power-down (ONA and ONB inputs LOW) mode. Fully static CMOS registers retain programmed data whatever the power-down state, as long as the supply voltage is present.
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
Data format The leading bits (dt15 to dt0) make up the data field, while the trailing three bits (ad2 to ad0) comprise an address field. The UMA1022M uses 4 of the 8 available addresses. The data format is shown in Table 1. The first bit entered is dt15, the last bit is ad0. For the divider ratios, the first bits entered (P0 and R0) are the Least Significant Bits (LSB). This is different from previous Philips synthesizers. The trailing address bits are decoded on the rising edge of E. This produces an internal load pulse to store the data in the addressed latch. To avoid erroneous divider ratios, the load pulse is not allowed during data reads by the frequency dividers. This condition is guaranteed by respecting a minimum E pulse width after data transfer.The test register bits should not normally be programmed active (HIGH); normal operation requires them set LOW. When the supply voltage is established an internal power-up initialization pulse is generated to preconfigure the circuit state. Production testing does not verify that all bits are preconfigured correctly. Table 1 Bit allocation; note 1 REGISTER BIT ALLOCATION DATA FIELD dt15 dt14 dt13 dt12 dt11 dt10 Test bits(2) P0(6) X X Notes 1. X = don't care. X X X A0(6) X CPI X S/D X dt9 XON(3) R0(6) dt8 dt7 dt6 dt5 X X X X dt4 P/A(4) dt3 dt2 dt1 REFDIV2(5) Power-down mode
UMA1022M
The RF and IF synthesizers are on when respectively the input signal ONA and ONB are HIGH. When turned on, the dividers and phase detector are synchronized to avoid random phase errors. When turned off, the phase detector is synchronized to avoid interrupting charge pump pulses. The UMA1022M has a very low current consumption in the power-down mode.
FIRST IN
LAST IN ADDRESS dt0 P15 R9 A13 ad2 0 0 0 0 ad1 1 0 0 1 ad0 1 0 1 0
RF synthesizer main divider coefficient reference divider coefficient IF synthesizer main divider coefficient
2. The test bits (at address 011) should not be programmed with any other value except all zeros for normal operation. 3. Bit XON = power-on of crystal oscillator low-noise amplifier; logic 1 turns on circuit block. 4. Bit P/A = 1 selects the output of the reference subdivider to the RF synthesizer and the output of the common reference divider to the IF synthesizer. 5. The coefficient REFDIV2 (4 bits) selects the phase comparison ratio (1 to 16) between IF and RF synthesizers (see Table 2). 6. P0 is the LSB of the RF main divider coefficient; R0 is the LSB of the reference divider coefficient; A0 is the LSB of the IF main divider.
1998 Dec 09
6
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
Table 2 Programming the coefficient REFDIV2 for reference subdivider dt2 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 dt1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 dt0 (MSB) 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1
UMA1022M
dt3 (LSB) 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 Table 3
REFDIV2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
RF and IF synthesizer nominal charge pump currents (gain) CPI 0 0 1 1 SINGLE/DOUBLE 0 1 0 1 ICPA (A) 470 840 1410 2480 ICPB (A) 470 840 470 840
1998 Dec 09
7
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDD, VDDX VCCA, VCCB VC - VD Vn PARAMETER digital and crystal reference supply voltages analog charge pump supply voltages difference in voltage between analog and digital supplies voltage at pins 7, 9, 10, 11 and 13 at pins 1, 3, and 20 at pins 4 and 6 at pins 15 and 17 VGND Ptot Tstg Tamb Tj(max) HANDLING difference in voltage between any of DGND, AGND and XGND (these pins should be connected together) total power dissipation IC storage temperature operating ambient temperature maximum junction temperature -0.3 -0.3 -0.3 -0.3 -0.3 - -55 -30 - MIN. -0.3 -0.3 -0.3
UMA1022M
MAX. +5.5 +5.5 +5.5 VDD + 0.3 VDDX + 0.3 VCCB + 0.3 VCCA + 0.3 +0.3 120 +125 +85 150 V V V V V V V V
UNIT
mW C C C
All pins withstand class 1 ESD test in accordance with "EIA/JESD22-A114-A" electrostatic discharge (ESD) sensitivity testing Human Body Model (HBM). THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air VALUE 120 UNIT K/W
1998 Dec 09
8
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
CHARACTERISTICS
UMA1022M
All values refer to the typical measurement circuit; Tamb = 25 C; VDD = VDDX = 2.7 to 5.5 V; VCCA = VCCB = 2.7 to 5.5 V; VCCA = VCCB VDD; unless otherwise specified. Characteristics for which only a typical value is given are not tested. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies; pins 5, 12, 16 and 19 VDD, VDDX digital and crystal reference supply voltages synthesizer digital supply current reference block supply current crystal oscillator and buffer currents RF synthesizer charge pump and prescaler supply currents IF synthesizer charge pump and prescaler supply currents VDD = VDDX; VCCA = VCCB VDD VCCA = VCCB VDD VDD = 3 V; E = 1; ONA and ONB = 1 VDDX = 3 V; XON = 0 VDDX = 3 V; XON = 1 VCCA = 3 V; ONA and ONB = 1 VCCB = 3 V; ONA and ONB = 1 2.7 2.7 - - - - - - 3.0 3.0 1.5 0.25 1.5 8.1 4.8 40 5.5 5.5 2.1 0.4 1.8 9.8 5.7 80 V V mA mA mA mA mA A
VCCA, VCCB charge pump supply voltages IDD IDDX1 IDDX2 ICCA ICCB Itot(pd)
total supply currents E = VDD; CLK and (ICCA(pd) + IDD(pd) + ICCB(pd) + IDDX(pd)) DATA = 0 V or VDD; in power-down mode ONA and ONB = 0; XON = 0
RF main divider input; pin 15 fRF VRF(rms) Rm Zi Ci fIF VIF(rms) RF input frequency AC-coupled input signal level (RMS value) main divider ratio input impedance (real part) pin input capacitance VCCA = VCCB 4.0 V fIF = 150 to 550 MHz fIF = 100 to 150 MHz fIF = 50 to 100 MHz Rm Zi Ci main divider ratio input impedance (real part) pin input capacitance fIF = 400 MHz fRF = 2 GHz fRF = 600 to 2100 MHz fRF = 300 to 600 MHz 300 35 70 512 - - - - - - 60 2 - - - - - - 60 2 2100 225 225 65535 - - pF MHz mV mV
IF main divider input; pin 6 IF input frequency AC-coupled input signal level (RMS value) 50 50 35 50 100 128 - - 550 400 225 225 225 16383 - - pF MHz MHz mV mV mV
1998 Dec 09
9
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
SYMBOL PARAMETER CONDITIONS MIN. TYP. - - - - - - - 4 2 4.5
UMA1022M
MAX.
UNIT
Synthesizers reference divider input; pins 1 and 20 fxtal Vxtal(rms) crystal reference oscillator frequency sinusoidal input signal level between pins 1 and 20 (RMS value) single-ended; fxtal = 6 to 20 MHz fxtal = 3 to 6 MHz differential; fxtal = 6 to 20 MHz fxtal = 3 to 6 MHz Rrefc Rrefa Zi Ci NF common reference division ratio reference subdivider division ratio input impedance (real part) per pin typical pin input capacitance small signal differential input noise figure matched to a 4 k source; XON = 1 70 140 8 1 fxtal = 10 MHz; XON = 1 - - - 500 500 1023 16 - - - k pF dB mV mV 35 70 250 250 mV mV 3 20 MHz
Phase detectors fPCmax maximum loop comparison frequency - 2000 - kHz
Charge pump outputs; pins 4 and 17 VCPA VCPB Iocp(err) Imatch ILcp Phase noise N900 RF synthesizer's contribution to fxtal = 13 MHz; close-in phase noise of 0.9 GHz VCO Vxtal = 0 dBm; signal inside closed-loop bandwidth fPC = 200 kHz RF synthesizer's contribution to fxtal = 13 MHz; close-in phase noise of 1.8 GHz VCO Vxtal = 0 dBm; signal inside closed-loop bandwidth fPC = 200 kHz IF synthesizer's contribution 180 MHz VCO signal inside closed-loop bandwidth fxtal = 13 MHz; Vxtal = 0 dBm; fPC = 1000 kHz - -86 -
dBc/Hz
output voltage compliance range; RF synthesizer output voltage compliance range; IF synthesizer charge pump output current error sink-to-source current matching charge pump off leakage current VCPA = 12VCCA; VCPB = 12VCCB note 1
0.4 0.4 -25 - -5
- - - 5 1
VCCA - 0.4 V VCCB - 0.4 V +25 - +5 % % nA
N1800
-
-80
-
dBc/Hz
N180
-
-104
-
dBc/Hz
1998 Dec 09
10
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
SYMBOL PARAMETER CONDITIONS MIN. TYP. - - - 2
UMA1022M
MAX.
UNIT
Interface logic input signal levels; pins 7, 9, 10, 11 and 13 VIH VIL Ibias Ci Zo VXOUT, VXOUTN Gv(diff) Vo(p-p) f/f(VDDX) HIGH-level input voltage LOW-level input voltage input bias current input capacitance logic 1 or logic 0 0.7VDD -0.3 -5 - - - XON = 1; fxtal = 10 MHz 18 XON = 1 - VDD + 0.3 0.3VDD +5 - - - 22 - V V A pF
Low noise crystal oscillator amplifier output signals; pins 3 and 18 differential output impedance (real part) DC output voltage small signal differential voltage gain limiting differential output voltage swing (peak-to-peak value) fxtal = 10 MHz 2 2.29 20 2 k V dB V ppm
frequency stability as a function of VDDX = 3 V 5%; note 2 - supply voltage change (referenced to initial frequency) - -
0.25 -
System specification FTRFIF FTIFRF Notes 1. Conditions: 0.4 < VCPA < (VCCA - 0.4) and 0.4 < VCPB < (VCCB - 0.4). 2. This value is directly dependent on the external resonator quality factor. Only guaranteed for the application circuit which is given in Fig.5. 3. Only guaranteed on the Philips application board. RF frequency and close harmonics feedthrough to IF frequency IF frequency and close harmonics feedthrough to RF frequency note 3 note 3 70 50 - - dBc dBc
1998 Dec 09
11
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
SERIAL BUS TIMING CHARACTERISTICS VDD = VDDX = VCCA = VCCB = 3 V; Tamb = 25 C; unless otherwise specified. SYMBOL Serial programming clock; CLK tr tf Tcy tSTART tEND tW(min) tSU;E tSU;DAT tHD;DAT Note input rise time input fall time clock period - - 100 10 10 - - - - - - - PARAMETER MIN. TYP.
UMA1022M
MAX.
UNIT
40 40 - - - - - - -
ns ns ns
Enable programming; E delay to rising clock edge delay from last falling clock edge minimum inactive pulse width enable set-up time to next clock edge 100 20 1500(1) 20 ns ns ns ns
Register serial input data; DATA input data to clock set-up time input data to clock hold time 20 20 ns ns
1. The minimum pulse width (tW(min)) can be smaller than 1.5 s when the following conditions are fulfilled: 383 a) Main divider input frequency f RF > --------------t W(min) 3 b) Reference divider input frequency f xtal > --------------t W(min)
tSU;DAT handbook, full pagewidth
tHD;DAT
Tcy
tf
tr
tEND tSU;E
CLK
DATA
LSB
MSB
ADDRESS
E tSTART tW(min)
MGE628
Fig.3 Serial bus timing diagram.
1998 Dec 09
12
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
AC TIMING CHARACTERISTICS VDD = VDDX = VCCA = VCCB = 3 V; Tamb = 25 C; unless otherwise specified. SYMBOL tPUP tPDWN tSTART tEND tSEND PARAMETER delay for initial power-up time for power-down from E = 0 (ONA/ONB = 0) time to turn-on either the RF or IF synthesizer from ONA/ONB time to turn-off either the RF or IF synthesizer from ONA/ONB waiting time before sending data on the serial bus - - - - 15000 MIN. TYP. 400 100 50 70 - - - - - -
UMA1022M
MAX.
UNIT s s s s s
handbook, full pagewidth
VDD = VCCA = VCCB tSTART
tPUP Itot tEND ONA = '1' or ONB = '1' tPDWN
E tSEND
MGE631
Fig.4 AC timing characteristics.
1998 Dec 09
13
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
APPLICATION INFORMATION
UMA1022M
analog supply
handbook, full pagewidth
12
100 nF VCO supply 12 100 nF 15 pF XGND 2 VDDX XIN 1 20 XIN 15 pF 19 13 MHz VCO supply 12 100 nF
4.7 F
crystal clock
XOUT
3
18
XOUT
15 pF 4.7 F
CPB IF VCO
(1) (1) (1)
4
17
CPA
(1)
RF VCO
analog supply
12 100 nF
VCCB 5 16
VCCA
12 100 nF
(1)
analog supply
(1)
18 18 18 56 digital supply IF
UMA1022M
IFB 6 15 RFA
18 18 56 18
56 pF 1 k ONB 7 14 AGND
56 pF
RF DGND 8 13 ONA 1 k digital supply
E
9
12
VDD
12 100 nF
MGE630
DATA
10
11
CLK
1 k
1 k
1 k
3-wire bus
(1) Loop filter values depend on the application.
Fig.5 Typical test and application diagram.
1998 Dec 09
14
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
UMA1022M
handbook, full pagewidth
power amplifier
transmit data RF PLL VOLTAGE CONTROLLED OSCILLATOR
transmit mixer
SPLITTER
LOW-PASS FILTER
RF MAIN DIVIDER
UMA1022M
duplex filter REFERENCE DIVIDER
RF PHASE COMPARATOR AND CHARGE PUMP
crystal clock 3-wire bus
OSCILLATOR
IF MAIN DIVIDER
IF PHASE COMPARATOR AND CHARGE PUMP
SPLITTER
VOLTAGE CONTROLLED OSCILLATOR IF PLL to demodulation
LOW-PASS FILTER
MGE629
band-pass filter
IF filter
low noise amplifier
first mixer
second mixer
Fig.6 Application block diagram.
1998 Dec 09
15
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
UMA1022M
SOT266-1
D
E
A X
c y HE vM A
Z
20
11
Q A2 pin 1 index A1 (A 3) Lp L A
1
e bp
10
detail X wM
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.5 A1 0.15 0 A2 1.4 1.2 A3 0.25 bp 0.32 0.20 c 0.20 0.13 D (1) 6.6 6.4 E (1) 4.5 4.3 e 0.65 HE 6.6 6.2 L 1.0 Lp 0.75 0.45 Q 0.65 0.45 v 0.2 w 0.13 y 0.1 Z (1) 0.48 0.18 10 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT266-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 90-04-05 95-02-25
1998 Dec 09
16
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 230 C. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results:
UMA1022M
* Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1998 Dec 09
17
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE WAVE BGA, SQFP PLCC(3), SO, SOJ not suitable suitable(2) suitable not recommended(3)(4) not recommended(5) suitable suitable suitable suitable suitable HLQFP, HSQFP, HSOP, HTSSOP, SMS not LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes
UMA1022M
REFLOW(1)
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1998 Dec 09
18
Philips Semiconductors
Product specification
Low cost dual frequency synthesizer for radio telephones
NOTES
UMA1022M
1998 Dec 09
19
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 Internet: http://www.semiconductors.philips.com
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
435102/750/04/pp20
Date of release: 1998 Dec 09
Document order number:
9397 750 04825

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